The max gain value of this transistor is 300 & this value will decide the capacity of amplification. In the S8050 NPN transistor, both the terminals like the emitter & collector will be reverse biased when the base pin is held at the ground and will be closed (Forward biased) when a signal is provided to the base pin.
Transfer Ratio of forwarding Current/hFE Value is120.Operating temperature (Max) ranges from -65 to +150 C.Transition Frequency (fT) Max is 100 MHz.Dissipation of Collector (Pc) Max is 1 Watt.Voltage from emitter to base (VBE) Max is 5V.Voltage from collector to base (VCB) Max is 30V.Voltage from collector to the emitter (VCE) max is 20V.Collector Current Max (IC) is 700mA/0.7A.Pin1 (Emitter): The flow of current will drain out using this terminal This transistor includes three pins where each pin and its functionality are discussed below. The pin configuration of the S8050 transistor & its symbol is shown below. For better performance of S8050 transistor, it must operate in forward bias condition otherwise Pin Configuration Here EB junction is forward biased whereas the CB junction is reverse biased. This transistor includes two PN junctions like EB and CB. So these transistors are available with two charge carriers like holes & electrons where the majority of charge carriers are electrons. Generally, transistors are available in two types like UJT & BJT where the S8050 transistor comes under BJT (Bipolar Junction Transistor) category. In the transistor, the small current at one terminal is mainly used to control the huge current at the remaining terminals. The base terminal in the transistor can be doped lightly whereas the collector terminal is doped moderately. These three transistor terminals are dissimilar in doping concentration wherever emitter is extremely doped as compared to both the terminals like collector and base. This transistor is a three-terminal component like emitter, base & collector which are used for external connection through different circuits. *This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.S8050 is an NPN Transistor with high current & low voltage capabilities. It is commonly used in low-power amplification and switching applications and is a good replacement for S8050. PN2222A: This is another widely used NPN transistor with a maximum current rating of 600mA and a maximum voltage rating of 40V. It is commonly used in low-power amplification and switching applications and is a good replacement for S8050.īC547: This is another widely used NPN transistor with a maximum current rating of 100mA and a maximum voltage rating of 45V.
Here are some possible replacements for S8050:ĢN3904: This is a widely used NPN transistor with a maximum current rating of 200mA and a maximum voltage rating of 40V.
S8050 is a general-purpose NPN transistor commonly used in low-power amplification and switching applications. It is typically used in low-power applications such as signal amplification, small signal switching, and voltage regulation.ĭue to its low cost and availability, the S8050 transistor is a popular choice for hobbyists, students, and electronic enthusiasts for various DIY projects and experimentation. The S8050 transistor has a maximum collector current rating of 700mA, a maximum collector-emitter voltage rating of 20V, and a maximum power dissipation rating of 625mW. It is manufactured by multiple semiconductor companies, including Fairchild, ON Semiconductor, and STMicroelectronics.
S8050 is a general-purpose NPN transistor commonly used in electronic circuits as a switching or amplifying device. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
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